High-Mobility Nanotube Transistor Memory

High-Mobility Nanotube Transistor Memory

A high-mobility (9000 cm2/V‚s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrate, and detected by threshold shift of the nanotube field-effect transistor. The high mobility of ...

Carbon Nanotube Transistor Compact Model

In this paper, we describe the development of device models and tools for the design of the carbon nanotube FET (CNFET). Both HSPICE model and Verilog-A model for CNFET including typical device/circuit level non-idealities have been developed. They can be used for design of nanotube transistor circuits as well as to study performance benefits of the new transistor.

MOCVD growth of GaN-based high electron mobility transistor structures

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

Hydrogen sensing properties of a metamorphic high electron mobility transistor

transistor Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101...